For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas
Nobuhiko OZAKI Koichi TAKEUCHI Shunsuke OHKOUCHI Naoki IKEDA Yoshimasa SUGIMOTO Kiyoshi ASAKAWA Richard A. HOGG
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/02/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
quantum dot, selective-area growth, metal mask, optical coherence tomography, superluminescent diode,
Full Text: PDF(518.7KB)>>
We developed advanced techniques for the growth of self-assembled quantum dots (QDs) for fabricating a broadband light source that can be applied to optical coherence tomography (OCT). Four QD ensembles and strain reducing layers (SRLs) were grown in selective areas on a wafer by the use of a 90° rotational metal mask. The SRL thickness was varied to achieve appropriate shifts in the peak wavelength of the QD emission spectrum of up to 120 nm. The four-color QD ensembles were expected to have a broad bandwidth of more than 160 nm due to the combination of excited state emissions when introduced in a current-induced broadband light source such as a superluminescent diode (SLD). Furthermore, a desired shape of the SLD spectrum can be obtained by controlling the injection current applied to each QD ensemble. The broadband and spectrum shape controlled light source is promising for high-resolution and low-noise OCT systems.