Compact Modeling of Expansion Effects in LDMOS

Takahiro IIZUKA  Takashi SAKUDA  Yasunori ORITSUKI  Akihiro TANAKA  Masataka MIYAKE  Hideyuki KIKUCHIHARA  Uwe FELDMANN  Hans Jurgen MATTAUSCH  Mitiko MIURA-MATTAUSCH  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.11   pp.1817-1823
Publication Date: 2012/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1817
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
high-voltage MOSFETs,  breakdown,  high-electric-field phenomena,  compact model,  surface potential,  

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In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.