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Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication
IEICE TRANSACTIONS on Electronics
Vol.E95-C
No.11
pp.1817-1823 Publication Date: 2012/11/01 Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1817 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential,
Full Text: PDF>>
Summary:
In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.
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