A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network

Yongchae JEONG  Girdhari CHAUDHARY  Jongsik LIM  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.11   pp.1783-1789
Publication Date: 2012/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1783
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
power amplifier,  class-F,  dual band,  

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A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA for the desired dual bands is designed. The proposed load network has the harmonic rejection of more than 24 dB which is sufficient for rejecting harmonics, and an insertion loss of less than 0.11 dB. The dual band matching network for the maximum output power results in the measured highest output power for each operating frequency. The fabricated class-F GaN PA has 43 dBm-65.4% and 43 dBm-63.9% of output power - efficiency at the desired dual frequencies.