Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device

Sang-Gun LEE  Hong-Seok CHOI  Chang-Wook HAN  Seok-Jong LEE  Yoon-Heung TAK  Byung-Chul AHN  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.11   pp.1756-1760
Publication Date: 2012/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1756
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
OLED,  fitting parameter,  J-V characteristics,  device simulation,  

Full Text: FreePDF(1.7MB)


Summary: 
A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (J-V) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called “Poole-Frenkel mobility model.” The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation.