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Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
Sang-Gun LEE Hong-Seok CHOI Chang-Wook HAN Seok-Jong LEE Yoon-Heung TAK Byung-Chul AHN
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
OLED, fitting parameter, J-V characteristics, device simulation,
Full Text: FreePDF(1.7MB)
A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (J-V) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called “Poole-Frenkel mobility model.” The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation.