Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions


IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.10   pp.1682-1688
Publication Date: 2012/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1682
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
high-level injection,  p-i-n diode,  reverse recovery,  carrier distribution,  compact model,  circuit simulation,  SPICE,  

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Reverse-recovery modeling for p-i-n diodes in the high current-density conditions are discussed. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained in the high current-density conditions, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. In addition, a specific feature under the high current-density condition is discussed. The proposed model is implemented into a commercial circuit simulator in the Verilog-A language and its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique.