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A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65 nm CMOS
Sang_yeop LEE Norifumi KANEMARU Sho IKEDA Tatsuya KAMIMURA Satoru TANOI Hiroyuki ITO Noboru ISHIHARA Kazuya MASU
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
injection locked frequency multiplier, ring VCO, pulse injection, CMOS,
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This paper proposes a low-phase-noise ring-VCO-based frequency multiplier with a new subharmonic direct injection locking technique that only uses a time-delay cell and four MOS transistors. Since the proposed technique behaves as an exclusive OR and can double the reference signal frequency, it increases phase correction points and achieves low phase noise characteristic across the wide output frequency range. The frequency multiplier was fabricated by using 65 nm Si CMOS process. Measured 1-MHz-offset phase noise at 6.34 GHz with reference signals of 528 MHz was -119 dBc/Hz.