A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65 nm CMOS

Sang_yeop LEE  Norifumi KANEMARU  Sho IKEDA  Tatsuya KAMIMURA  Satoru TANOI  Hiroyuki ITO  Noboru ISHIHARA  Kazuya MASU  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.10   pp.1589-1597
Publication Date: 2012/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1589
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
injection locked frequency multiplier,  ring VCO,  pulse injection,  CMOS,  

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This paper proposes a low-phase-noise ring-VCO-based frequency multiplier with a new subharmonic direct injection locking technique that only uses a time-delay cell and four MOS transistors. Since the proposed technique behaves as an exclusive OR and can double the reference signal frequency, it increases phase correction points and achieves low phase noise characteristic across the wide output frequency range. The frequency multiplier was fabricated by using 65 nm Si CMOS process. Measured 1-MHz-offset phase noise at 6.34 GHz with reference signals of 528 MHz was -119 dBc/Hz.