Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver

Ilku NAM
Hyunwon MOON
Doo Hyung WOO

IEICE TRANSACTIONS on Communications   Vol.E95-B    No.7    pp.2498-2500
Publication Date: 2012/07/01
Online ISSN: 1745-1345
DOI: 10.1587/transcom.E95.B.2498
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Wireless Communication Technologies
CMOS,  DVB-H,  front-end,  RF,  UHF,  wideband,  

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In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.