A Novel Body Bias Selection Scheme for Leakage Minimization

Dong-Su LEE  Sung-Chan KANG  Young-Hyun JUN  Bai-Sun KONG  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.9   pp.1490-1493
Publication Date: 2011/09/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1490
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Circuits
Keyword: 
body bias,  leakage current,  subthreshold leakage,  junction leakage,  leakage monitoring,  

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Summary: 
In this letter, a novel body bias selection scheme for minimizing the leakage of MOS transistors is presented. The proposed scheme directly monitors leakages at present and adjacent body bias voltages, and dynamically updates the voltage at which the leakage is minimized regardless of process and temperature variations. Comparison results in a 46 nm CMOS technology indicated that the proposed scheme achieved leakage reductions of up to 68% as compared to conventional body biasing schemes.