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A Wideband Noise Cancelling Low Noise Amplifier for 3GPP LTE Standard
Viet-Hoang LE Hoai-Nam NGUYEN Sun-a KIM Seok-Kyun HAN Sang-Gug LEE
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Microwaves, Millimeter-Waves
common gate, CMOS, capacitive cross-coupling, highly linear gm, LTE, noise cancellation, wideband LNA,
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This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.42.6 dB noise figure (NF) over the entire operating band (0.72.7 GHz) while drawing 9 mA from a 1.8 V supply.