Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs

Zunchao LI  Jinpeng XU  Linlin LIU  Feng LIANG  Kuizhi MEI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.6   pp.1120-1126
Publication Date: 2011/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1120
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET,  surrounding-gate,  dual-material,  halo,  

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Summary: 
The asymmetrical halo and dual-material gate structure is used in the surrounding-gate metal-oxide-semiconductor field effect transistor (MOSFET) to improve the performance. By treating the device as three surrounding-gate MOSFETs connected in series and maintaining current continuity, a comprehensive drain current model is developed for it. The model incorporates not only channel length modulation and impact ionization effects, but also the influence of doping concentration and vertical electric field distributions. It is concluded that the device exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.