A 1-Mbps 1.6-µA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme

Mitsuru HARADA

IEICE TRANSACTIONS on Electronics   Vol.E94-C    No.6    pp.1084-1090
Publication Date: 2011/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1084
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
active tags,  RFID,  VHF,  low power,  transmitter,  OOK,  wireless sensor networks,  

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A micro-power active-RFID LSI with an all-digital RF-transmitting scheme achieves experimental 10-m-distance communication with a 1-Mbps data rate in the 300-MHz frequency band. The IC consists of an RF transmitter and a power supply circuit. The RF transmitter generates wireless signals without a crystal. The power supply circuit controls the energy flow from the battery to the IC and offers intermittent operation of the RF transmitter. The IC draws 1.6 µA from a 3.4-V supply and is implemented in a 0.2-µm CMOS process in an area of 1 mm2. The estimated lifetime of the IC is over ten years with a coin-size battery.