Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory

Jong-Dae LEE
Hyun-Min SEUNG
Kyoung-Cheol KWON
Jea-Gun PARK

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C    No.5    pp.850-853
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.850
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
polymer,  nonvolatile,  memory,  nanocrystal,  

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Summary: 
In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.