Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires

Naoaki TAKEBE  Takashi KOBAYASHI  Hiroyuki SUZUKI  Yasuyuki MIYAMOTO  Kazuhito FURUYA  

IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.5   pp.830-834
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.830
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
heterojunction bipolar transistor,  InP,  MOCVD,  CBr4,  

Full Text: PDF>>
Buy this Article

In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213 GHz and a maximum oscillation frequency (fmax) of 100 GHz were obtained at an emitter current density of 725 kA/cm2.