A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills

Sungjin KIM  Hyunchul KIM  Dong-Hyun KIM  Sanggeun JEON  Yeocho YOON  Jae-Sung RIEH  

IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.5   pp.807-813
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.807
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
mm-wave(MMW),  RFCMOS,  low noise amplifier,  

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In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 µm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency fT. The measured gain was 18.6 dB with VDD = 1.2 V and increased up to 20.2 dB with VDD = 1.8 V at 66 GHz. The measured NF showed a minimum value of 7.0 dB at 62 GHz. DC power consumption was 24 mW with VDD = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm 0.69 mm. This work was further extended to investigate the effect of dummy fills on LNA performance. An identical LNA, except for the dummy fills formed very close to (and under) the metal lines of spiral inductors and interconnects, was also fabricated and compared with the standard LNA. A peak gain degradation of 3.6 dB and average NF degradation of 1.3 dB were observed, which can be ascribed to the increased mismatch and line loss due to the dummy fills.