Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit

Takeshi SASAKI  Takuya IMAMOTO  Tetsuo ENDOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.5   pp.751-759
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.751
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k dielectric film,  high-k/metal gate stack,  mobility,  CMOS,  inverter,  

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Summary: 
As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.