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An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
non-volatile memory, MONOS, SiN, first principles calculation, charge trap memory,
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Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.