An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory

Akira OTAKE  Keita YAMAGUCHI  Katsumasa KAMIYA  Yasuteru SHIGETA  Kenji SHIRAISHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.5   pp.693-698
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.693
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memory,  MONOS,  SiN,  first principles calculation,  charge trap memory,  

Full Text: PDF(1.1MB)>>
Buy this Article




Summary: 
Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.