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Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz
Ryuichi FUJIMOTO Kyoya TAKANO Mizuki MOTOYOSHI Uroschanit YODPRASIT Minoru FUJISHIMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
millimeter wave, device model, MOSFET, transmission line, pad, bond-based design,
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Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.