Probing of Electric Field Distribution in ITO/PI/P3HT/Au Using Electric Field Induced Second Harmonic Generation

Ryo MIYAZAWA  Dai TAGUCHI  Takaaki MANAKA  Mitsumasa IWAMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.2   pp.185-186
Publication Date: 2011/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.185
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
electron trap,  SHG,  MIS,  P3HT,  C-V,  

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Summary: 
By using electric field induced second harmonic generation (EFISHG) and Capacitance-Voltage (C-V) measurements, we studied carrier behaviors in ITO/polyimide (PI)/poly(3-hexylthiophene)(P3HT)/Au diodes. Photoillumination caused the threshold voltage shift in the C-V, and agreed well with the shift probed by the EFISHG. Results suggested trapped electrons were accumulated in the PI layer.