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Probing of Electric Field Distribution in ITO/PI/P3HT/Au Using Electric Field Induced Second Harmonic Generation
Ryo MIYAZAWA Dai TAGUCHI Takaaki MANAKA Mitsumasa IWAMOTO
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/02/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
electron trap, SHG, MIS, P3HT, C-V,
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By using electric field induced second harmonic generation (EFISHG) and Capacitance-Voltage (C-V) measurements, we studied carrier behaviors in ITO/polyimide (PI)/poly(3-hexylthiophene)(P3HT)/Au diodes. Photoillumination caused the threshold voltage shift in the C-V, and agreed well with the shift probed by the EFISHG. Results suggested trapped electrons were accumulated in the PI layer.