A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography

Tong WANG  Yoshiki SHIMIZU  Naoyuki ISHIDA  Hirobumi USHIJIMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.2   pp.146-150
Publication Date: 2011/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.146
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Molecular and Organic Devices)
Category: 
Keyword: 
solid inking,  InAs nanowire,  patterning,  dip-pen nanolithography,  

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Summary: 
We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.