CMOS Circuits Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers

Kodai KIKUCHI  Fanghua PU  Hiroshi YAMAUCHI  Masaaki IIZUKA  Masakazu NAKAMURA  Kazuhiro KUDO  

IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.2   pp.136-140
Publication Date: 2011/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.136
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Molecular and Organic Devices)
organic transistor,  silicone-resin,  polymer gate dielectric,  CMOS inverter,  stacked structure,  

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We have demonstrated the inverter operation of stacked-structure CMOS devices using pentacene and ZnO as active layers. The fabrication process of the device is as follows: A top-gate-type ZnO thin-film transistor (TFT), working as an n-channel transistor, was formed on a glass substrate. Then, a bottom-gate-type pentacene TFT, as a p-channel transistor, was fabricated on top of the ZnO TFT while sharing a common gate electrode. For both TFTs, solution-processed silicone-resin layers were used as gate dielectrics. The stacked-structure CMOS has several advantages, for example, easy patterning of active material, compact device area per stage and short interconnection length, as compared with the planar configuration in a conventional CMOS circuit.