1.5-V 6–10 GHz Broadband CMOS LNA and Transmitting Amplifier for DS-UWB Radio

Jhin-Fang HUANG
Wen-Cheng LAI

IEICE TRANSACTIONS on Electronics   Vol.E94-C    No.11    pp.1807-1810
Publication Date: 2011/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1807
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Electronic Circuits
low voltage,  transmitting amplifier,  LNA,  DS-UWB,  

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A 6–10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-µm 1P6M standard CMOS process. The CMOS LNA and TA are checked by on-wafer measurement with the DC supply voltage of 1.5 V. From 6–10 GHz, the broadband LNA exhibits a noise figure of 5.3–6.2 dB, a gain of 11–13.8 dB, a P1 dB of -15.7 - -10.8 dBm, a IIP3 of -5.5 - -1 dBm, a DC power consumption of 12 mW, and an input/output return loss higher than 11/12 dB, respectively. From 6–10 GHz, the broadband TA exhibits a gain of 7.6–10.5 dB, a OP1 dB of 2.8–6.1 dBm, a OIP3 of 12.3–15.1 dBm, and a PAE of 8.8–17.6% @ OP1 dB, and a η of 9.7–21.1% @ OP1 dB, and an input/output return loss higher than 6.8/3.2 dB, respectively.