Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors

Masahiro FUNAHASHI  Fapei ZHANG  Nobuyuki TAMAOKI  

IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.11   pp.1720-1726
Publication Date: 2011/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1720
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
liquid-crystalline semiconductor,  field-effect transistor,  carrier transport,  field-effect mobility,  phenylterthiophene,  

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Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10-2 cm2V-1s-1. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350 K for 3-TTPPh-5.