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An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs
Jong-Pil SON Jin Ho KIM Woo Song AHN Seung Uk HAN Satoru YAMADA Byung-Sick MOON Churoo PARK Hong-Sun HWANG Seong-Jin JANG Joo Sun CHOI Young-Hyun JUN Soo-Won KIM
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
DRAM, antifuse, repair, post-package repair, recovery,
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A reliable antifuse scheme has been very hard to build, which has precluded its implementation in DRAM products. We devised a very reliable multi-cell structure to cope with the large process variation in the DRAM-cell-capacitor type antifuse system. The programming current did not rise above 564 µA even in the nine-cell case. The cumulative distribution of the successful rupture in the multi-cell structure could be curtailed dramatically to less than 15% of the single-cell's case and the recovery problem of programmed cells after the thermal stress (300) had disappeared. In addition, we also presented a Post-Package Repair (PPR) scheme that could be directly coupled to the external high-voltage power rail via an additional pin with small protection circuits, saving the chip area otherwise consumed by the internal pump circuitry. A 1 Gbit DDR SDRAM was fabricated using Samsung's advanced 50 nm DRAM technology, successfully proving the feasibility of the proposed antifuse system implemented in it.