High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration

Masatake HANGAI  Yukinobu TARUI  Yoshitaka KAMO  Morishige HIEDA  Masatoshi NAKAYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E94-C    No.10    pp.1533-1538
Publication Date: 2011/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1533
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
T/R switch,  GaN HEMT,  high-power,  series-shunt/shunt configuration,  

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High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.