A 60 GHz High Gain Transformer-Coupled Differential Cascode Power Amplifier in 65 nm CMOS

Jenny Yi-Chun LIU  Mau-Chung Frank CHANG  

IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.10   pp.1508-1514
Publication Date: 2011/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.1508
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
CMOS,  millimeter-wave,  integrated circuits,  power amplifier,  V-band,  

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A fully differential high gain V-band three-stage transformer-coupled power amplifier (PA) is designed and implemented in 65 nm CMOS process. On-chip transformers which offer DC biasing for individual stages, extra stabilization mechanism, single-ended to differential conversion, and input/inter-stage/output matching are used to facilitate a compact amplifier design. The design and optimization methodologies of active and passive devices are presented. With a cascode configuration, the amplifier achieves a linear gain of 30.5 dB centered at 63.5 GHz and a -40 dB reverse isolation under a 1 V supply, which compares favorably to recent published V-band PAs. The amplifier delivers 9 dBm and 13 dBm saturation output power (Psat) under 1 V and 1.5 V supplies, respectively, and occupies a core chip area of 0.05 mm2. The measurement results validate a high gain and area-efficient power amplifier design methodology in deep-scaled CMOS for applications in millimeter-wave communication.