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Design and Measurement of a 1-kBit eFuse One-Time Programmable Memory IP Based on a BCD Process
Du-Hwi KIM Ji-Hye JANG Liyan JIN Jae-Hyung LEE Pan-Bong HA Young-Hee KIM
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
eFuse, OTP, low-power, asynchronous interface, digital sensing,
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We propose a low-power eFuse one-time programmable (OTP) memory IP based on a bipolar CMOS DMOS (BCD) process. It is an eFuse OTP memory cell which uses separate transistors that are optimized in program and in read mode. The eFuse cell also uses poly-silicon gates having co-silicide. An asynchronous interface and a separate I/O method are used for the low-power and small-area eFuse OTP memory IP. Additionally, we propose a new circuit protecting a short-circuit current in the VDD-to-VIO voltage level translator circuit while the VDD voltage is being generated by the voltage regulator at power-up. A digital sensing circuit using clocked inverters is used to sense a bit-line (BL) datum. Furthermore, the poly-silicon of the IP is split into n+ poly-silicon and p+ poly-silicon to optimize the eFuse link. The layout size of the designed eFuse OTP memory IP with Dongbu HiTek's 0.18 µm BCD process is 283.565524.180 µm2. It is measured by manufactured test IPs with Dongbu HiTek's 0.18 µm BCD process that the programming voltage of the n+ gate poly-silicon is about 0.1 V less than that of the p+ gate poly-silicon.