Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL  Tsuneyoshi KOMORI  Kouhei HORIIKE  Tetsuya SUEMITSU  Taiichi OTSUJI  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.8   pp.1286-1289
Publication Date: 2010/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1286
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: THz Electronics
terahertz,  plasmon resonance,  emitter,  dual grating gate dimension,  

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We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.