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Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
Amine EL MOUTAOUAKIL Tsuneyoshi KOMORI Kouhei HORIIKE Tetsuya SUEMITSU Taiichi OTSUJI
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: THz Electronics
terahertz, plasmon resonance, emitter, dual grating gate dimension,
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We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.