E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

Issei WATANABE  Akira ENDOH  Takashi MIMURA  Toshiaki MATSUI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.8   pp.1251-1257
Publication Date: 2010/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1251
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InGaAs/InAlAs HEMT,  E-band LNA-MMIC,  maximum oscillation frequency,  current-gain cutoff frequency,  minimum noise figure,  

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Summary: 
E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50 nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (fmax) of 550 GHz and a current-gain cutoff frequency (fT) of 450 GHz at room temperature, which is first experimental demonstration that fmax as high as 550 GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3 dB with an associated gain of 20.6 dB at 79 GHz.