Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4

Sanghyun SEO  Eunjung CHO  Giorgi AROSHVILI  Chong JIN  Dimitris PAVLIDIS  Laurence CONSIDINE  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.8   pp.1245-1250
Publication Date: 2010/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1245
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
AlN,  AlN/GaN MISFET,  AlN/GaN HFET,  wide-bandgap,  frequency-dispersion,  

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The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported. The DC characteristics are analyzed in conjunction with the power performance of the device at high frequencies. Studies of the low frequency characteristics are presented and the results are compared with those of AlGaN/GaN High Electron Mobility Transistors (HEMTs). Small signal measurements showed a current gain cutoff frequency and maximum oscillation frequency of 49.9 GHz and 102.3 GHz respectively. The overall characteristics of the device include a peak current density of 335 mA/mm, peak extrinsic transconductance of 130 mS/mm, a maximum output power density of 533 mW/mm with peak power added efficiency (P.A.E.) of 41.3% and linear gain of 17 dB. The maximum frequency dispersion of transconductance and output resistance of the fabricated MISFETs is 20% and 21% respectively.