Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

Stephan MAROLDT  Dirk WIEGNER  Stanislav VITANOV  Vassil PALANKOVSKI  Rudiger QUAY  Oliver AMBACHER  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.8   pp.1238-1244
Publication Date: 2010/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1238
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Gallium Nitride,  power amplifier,  switch-mode,  efficiency,  

Full Text: PDF>>
Buy this Article

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.