An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC

Takana KAHO
Motoharu SASAKI
Tomohiro SEKI
Kazuhiro UEHARA
Kiyomichi ARAKI

IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.7    pp.1119-1125
Publication Date: 2010/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1119
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
multi-layer inductor,  stacked inductor,  three-dimensional MMIC,  GaAs,  

Full Text: PDF(3.2MB)>>
Buy this Article

Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of single- and multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors produce 2-11 times higher inductance than that of conventional inductors on 2D-MMICs although they are the same size. This means that the proposed multi-layer inductors have smaller areas with the same inductances than those of conventional inductors. We also conducted the first-ever investigation of how performance factors such as parasitic capacitance, Q-factor, and self-resonant frequency are degraded in multi-layer inductors vis-a-vis those of conventional inductors. A microwave amplifier using multi-layer inductors was demonstrated and found to reduce circuit size by 20%.