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A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling
Naoki TAKAYAMA Kota MATSUSHITA Shogo ITO Ning LI Keigo BUNSEN Kenichi OKADA Akira MATSUZAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
de-embedding, S-parameter measurement, mm-wave, RF CMOS, transmission line,
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This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.