A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation

Kenichi AGAWA  Shinichiro ISHIZUKA  Hideaki MAJIMA  Hiroyuki KOBAYASHI  Masayuki KOIZUMI  Takeshi NAGANO  Makoto ARAI  Yutaka SHIMIZU  Asuka MAKI  Go URAKAWA  Tadashi TERADA  Nobuyuki ITOH  Mototsugu HAMADA  Fumie FUJII  Tadamasa KATO  Sadayuki YOSHITOMI  Nobuaki OTSUKA  

IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.6    pp.803-811
Publication Date: 2010/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.803
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
CMOS wireless transceiver,  Bluetooth,  sensitivity,  temperature compensation,  phase noise,  VCO pulling,  MOS switch,  leakage current,  

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A 2.4 GHz 0.13 µm CMOS transceiver LSI, supporting Bluetooth V2.1+enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 and +90. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 µm CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.