Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Hyun Woo KIM  Dong Hun KIM  Joo Hyung YOU  Tae Whan KIM  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.651-653
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.651
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Memory Devices
SANOS,  SONOS,  charge transport,  silicon nitride,  stacked tunneling layer,  

Full Text: PDF(508.6KB)>>
Buy this Article

The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.