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Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
Hyun Woo KIM Dong Hun KIM Joo Hyung YOU Tae Whan KIM
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Memory Devices
SANOS, SONOS, charge transport, silicon nitride, stacked tunneling layer,
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The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.