Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector

Yasuyuki MIYAMOTO  Shinnosuke TAKAHASHI  Takashi KOBAYASHI  Hiroyuki SUZUKI  Kazuhito FURUYA  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.644-647
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.644
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Compound Semiconductor Devices
InGaAs/InP,  HBT,  Kirk effect,  current spreading,  

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We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.