SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition

Jae Sub OH  Kwang Il CHOI  Young Su KIM  Min Ho KANG  Myeong Ho SONG  Sung Kyu LIM  Dong Eun YOO  Jeong Gyu PARK  Hi Deok LEE  Ga Won LEE  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.590-595
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.590
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
SONOS,  SOHOS,  flash memory,  high-k,  HfO2,  nonvolatile memory,  Atomic Layer Deposition,  

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A HfO2 as the charge-storage layer with the physical thickness thinner than 4 nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4 nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.