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InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
Mi-Ra KIM Jin-Koo RHEE Chang-Woo LEE Yeon-Sik CHAE Jae-Hyun CHOI Wan-Joo KIM
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
InP, Gunn diodes, shallow-barrier schottky contacts, current-limiting cathode,
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We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its input voltage and corresponding current were 8.55 V and 252 mA, respectively.