InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators

Mi-Ra KIM  Jin-Koo RHEE  Chang-Woo LEE  Yeon-Sik CHAE  Jae-Hyun CHOI  Wan-Joo KIM  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.585-589
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.585
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
InP,  Gunn diodes,  shallow-barrier schottky contacts,  current-limiting cathode,  

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Summary: 
We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its input voltage and corresponding current were 8.55 V and 252 mA, respectively.