Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots

Katsunori MAKIHARA
Mitsuhisa IKEDA

IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.5    pp.569-572
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.569
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Si quantum dots,  random telegraph signals,  AFM/KFM,  

Full Text: PDF>>
Buy this Article

Silicon-quantum-dots (Si-QDs) with an areal density as high as 1012 cm - 2 were self-assembled on thermally-grown SiO2 by low pressure CVD using Si2H6, in which OH-terminated SiO2 surface prior to the Si CVD was exposed to GeH4 to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array.