Study on Quantum Electro-Dynamics in Vertical MOSFET

Masakazu MURAGUCHI  Tetsuo ENDOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.552-556
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.552
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET,  quantum electro-dynamics,  resonant tunneling,  surrounding gate,  time-dependent Schrodinger equation,  

Full Text: PDF(3.2MB)>>
Buy this Article




Summary: 
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.