Synthesis of Small Diameter Silicon Nanowires on SiO2 and Si3N4 Surfaces

Jae Hyun AHN  Jae-Hyun LEE  Tae-Woong KOO  MyungGil KANG  Dongmok WHANG  SungWoo HWANG  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.546-551
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.546
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
silicon nanowire,  VLS,  bottom-up synthesis,  selective growth,  

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We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si3N4 substrates is higher (460-470) than that of the case of normal Si substrates (440). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the guided growth over metal structures is also shown to be possible. Selective growth of SiNWs on pre-patterned surfaces opens up the possibility of self-aligning SiNWs for the integration of complex device structures.