Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit

Kwang-Jow GAN  Dong-Shong LIANG  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.4   pp.514-520
Publication Date: 2010/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.514
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
negative differential resistance,  PVCR,  hysteresis phenomena,  BiCMOS process,  

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A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.