A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

Myounggon KANG  Ki-Tae PARK  Youngsun SONG  Sungsoo LEE  Yunheub SONG  Young-Ho LIM  

IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.2    pp.182-186
Publication Date: 2010/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.182
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
NAND,  FLASH,  row decoder,  high voltage switch,  low voltage,  area scaling,  low power,  

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A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.