A High-Efficient Transformer Using Bond Wires for Si RF IC

Eunil CHO  Sungho LEE  Jaejun LEE  Sangwook NAM  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.1   pp.140-141
Publication Date: 2010/01/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.140
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electromagnetic Theory
CMOS RF integrated circuit,  monolithic transformers,  bond wires,  balun,  

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This paper presents a design of a monolithic transformer using bond wires. The proposed transformer structure has several advantages such as high power handling and high efficiency. It shows that the measured insertion loss at the 1.9 GHz range is -1.54 dB (70%), which is higher than the spiral transformer of the same size. Also, it shows a phase error of less than 1 degree.