A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors

Kianoush SOURI  Hossein SHAMSI  Mehrshad KAZEMI  Kamran SOURI  

IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.12   pp.1708-1712
Publication Date: 2010/12/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1708
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Electronic Circuits
bandgap,  reference voltage,  weak inversion,  MOSFET,  

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This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86 dB and for the temperature range from -55C to 125C, the variation of the output reference voltage is less than 66 ppm/C.