Publication IEICE TRANSACTIONS on ElectronicsVol.E93-CNo.12pp.1708-1712 Publication Date: 2010/12/01 Online ISSN: 1745-1353 DOI: 10.1587/transele.E93.C.1708 Print ISSN: 0916-8516 Type of Manuscript: BRIEF PAPER Category: Electronic Circuits Keyword: bandgap, reference voltage, weak inversion, MOSFET,
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Summary: This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86 dB and for the temperature range from -55C to 125C, the variation of the output reference voltage is less than 66 ppm/C.